Non-corrosive cleaning composition for removing plasma etching residues

ABSTRACT

A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.

FIELD OF THE INVENTION

This invention relates to a novel cleaning composition for use inmicroelectronics manufacturing, and more particularly to a non-corrosivecleaning composition for removing plasma etch residues formed on wafersubstrates after plasma etching of metal layers or oxide layersdeposited on the substrates.

BACKGROUND OF THE INVENTION

In the manufacture of microcircuits, positive photoresists are used asan intermediate mask for transferring an original mask pattern of areticule onto wafer substrates by means of a series of photolithographyand plasma etching steps. One of the final steps in the microcircuitmanufacturing process is the removal of the patterned photoresist filmsfrom the substrates. In general, this step is affected by one of twomethods. One method involves a wet stripping step in which thephotoresist-covered substrate is brought into contact with a photoresiststripper solution that consists primarily of an organic solvent and anamine. However, stripper solutions cannot completely and reliably removethe photoresist films, especially if the photoresist films have beenexposed to UV radiation and plasma treatments during fabrication. Somephotoresist films become highly crosslinked by such treatments and aremore difficult to dissolve in the stripper solution. In addition, thechemicals used in these conventional wet stripping methods are sometimesineffective for removing inorganic residual materials formed during theplasma etching of metal or oxide layers with halogen-containing gases.

An alternative method of removing a photoresist film involves exposing aphotoresist-coated wafer to oxygen-based plasma in order to burn theresist film from the substrate surface in a process known as plasmaashing. Plasma ashing has become more popular in the microcircuitmanufacturing process because it is carried out in a vacuum chamber and,hence, is expected to be less susceptible to airborne particulate ormetallic contamination. However, plasma ashing is also not fullyeffective in removing the plasma etching by-products noted above.Instead, removal of these plasma etching by-products must beaccomplished by subsequently exposing the photoresist film to certaincleaning solutions. Several commercial products are now available toclean the plasma etching by-products left by plasma etching followed byplasma ashing. For example, EKC 265, available from EKC Technology,Inc., is a post etching cleaning solution composed of water,alkanolamine, catechol and hydroxylamine. Such a composition isdisclosed in U.S. Pat. No. 5,279,771 to Lee. ACT 935, available fromAshland Chemical, is another post etching cleaning solution and iscomposed of water, alkanolamine and hydroxylamine. Such a composition isdisclosed in U.S. Pat. No. 5,419,779 to Ward. In both cases,hydroxylamine is used as a corrosion inhibitor. ELM C-30, available fromMitsubishi Gas Chemical, is composed of water, N,N-dimethylformamide, afluorine compound, organic carboxylate, and a sugar alcohol, wherein thesugar alcohol acts as a corrosion inhibitor. Such a composition isdisclosed in U.S. Pat. No. 5,630,904 to Aoyama et al.

These commercial products can effectively dissolve plasma etchingresidues, however, they can also attack the metallic and oxide layersdeposited patternwise on the substrate. This is because the pH of EKC265 and ACT 935 is above 11 and ELM C-30 contains a fluorine compound.The corrosion inhibitors used in these products are not completelyeffective in stopping corrosion, because metal layers such as copper,aluminum or aluminum alloys (e.g., Al—Cu—Si), and the like areparticularly corrosion sensitive. Furthermore, while the addition of asuitable corrosion inhibitor is essential to prevent corrosion of thesubstrate metal layers, some corrosion inhibitors tend to inhibit theremoval of the plasma etching residue and/or form an insoluble filmdeposited on the metal substrate surface. Therefore, the corrosioninhibitor must be carefully selected.

It is also difficult to balance effective plasma etching residue removalover corrosion inhibition because chemical compositions of the plasmaetching residues are generally similar to those of the metal layers oroxide layers on the substrate. The alkanolamines used in prior artcleaning compositions were oftentimes found to attack the plasma etchingresidue and the substrate metal layers in the presence of water.Accordingly, there remains a need for a composition that can selectivelyand effectively remove plasma etching residues without the unwantedattack on the metallic and oxide layers, which causes a loss of metallayers.

Several other patents in the photoresist stripper/cleaner applicationfield exist as follows, although none of them disclose the use of thecompositions of the present invention:

Japanese Patent Application No. 7-028254, assigned to Kanto Kagaku,discloses a non-corrosive resist removal liquid comprising a sugaralcohol, an alcohol amine, water, and a quaternary ammonium hydroxide.

PCT Published Patent Application No. WO 88-05813 teaches a positive ornegative photoresist stripper containing butyrolactone or caprolactone,quaternary ammonium hydroxide compound, and optionally, a nonionicsurfactant.

U.S. Pat. No. 4,239,661 to Muraoka et al. discloses a surface-treatingagent comprising an aqueous solution of 0.01% to 20% trialkyl(hydroxyalkyl) ammonium hydroxide. This agent is useful in removingorganic and inorganic contaminants deposited on the surface ofintermediate semiconductor products.

U.S. Pat. No. 4,904,571 to Miyashita et al. teaches printed circuitboard photoresist stripper composition containing a solvent (e.g.,water, alcohols, ethers, ketones, and the like), an alkaline compounddissolved in the solvent, including quaternary ammonium hydroxide, and aborohydride compound dissolved in the solvent.

U.S. Pat. No. 5,091,103 to Dean et al. teaches a positive photoresiststripping composition containing: (A) N-alkyl-2-pyrrolidone; (B)1,2-propanediol; and (C) tetraalkylammonium hydroxide.

U.S. Pat. No. 5,139,607 to Ward et al. teaches positive and negativephotoresist stripping composition containing: (A) tetrahydrofurfurylalcohol; (B) a polyhydric alcohol (e.g., ethylene glycol or propyleneglycol); (C) the reaction product of furfuryl alcohol and an alkyleneoxide; (D) a water-soluble Bronstead base type hydroxide compound (e.g.,alkali metal hydroxide, ammonium hydroxide and tetramethyl ammoniumhydroxide); and (E) water. Optionally, the composition may also containup to 1% of a nonionic surfactant.

U.S. Pat. No. 5,174,816 to Aoyama et al. discloses a composition forremoving chlorine remaining on the surface of an aluminum line patternsubstrate after dry etching, which composition comprises an aqueoussolution containing 0.01 to 15% by weight of a quaternary ammoniumhydroxide, such as trimethyl (2-hydroxyethyl) ammonium hydroxide, and0.1 to 20% by weight of sugar or sugar alcohol, such as xylitol,mannose, glucose and the like.

Other compositions used to strip photoresist include a solution of H₂SO₄and an oxidizing agent such as H₂O₂ that oxidizes, and thus decomposesorganic photoresists. However, solutions containing strong acids andoxidizing agents are hazardous to handle, must be applied at elevatedtemperatures, and require a sufficient amount of hot deionized (DI)water after stripping is performed. Also, such solutions have a shortactive life as the oxidizing agent readily decomposes. Thus, it isnecessary to frequently replenish the solutions. The need for solutionreplenishment renders the process both hazardous and economicallyinefficient. In addition, these types of conventional acid-basedchemistries are too aggressive on the metal substrates.

Therefore, there remains a need for a new type of cleaning compositionfor removing plasma etch residues from substrates. Additionally, thereremains a need for such a cleaning composition that does notdeleteriously affect the substrate. Further, there remains a need forsuch a cleaning composition that is aqueous-based, non-hazardous andwill not harm the environment.

SUMMARY OF THE INVENTION

The present invention is directed to a non-corrosive cleaningcomposition that is useful primarily for removing plasma etch residuesfrom a substrate. The composition contains (a) water; (b) at least onehydroxylammonium compound; (c) at least one basic compound, preferablyselected from the group consisting of amines and quaternary ammoniumhydroxides; and (d) at least one organic carboxylic acid. Optionally, apolyhydric compound may be included. The pH of the composition isbetween about 2 to about 6.

DETAILED DESCRIPTION OF THE INVENTION

Metal substrates are generally susceptible to corrosion. For example,substrates such as aluminum, copper, aluminum-copper alloy, tungstennitride, and other metals and metal nitrides will readily corrode byusing conventional cleaning chemistries. This is due to the highalkalinity of the conventional cleaning solutions. This problem isresolved by using the cleaning composition of the present invention,which effectively cleans a metal substrate without promoting corrosionof the metal substrate because of its weak acidic formulation.

At least one hydroxylammonium compound must be included as a keycomponent in the composition of the present invention. Thehydroxylammonium compound, for example, may be a hydroxylammonium saltthat has the formula (I):n (NR₁R₂R₃OH)⁺(X^(−n))   (I)wherein R₁, R₂ and R₃ are individually selected from hydrogen, loweralkyl groups having 1 to 4 carbon atoms, lower alkoxy groups having 1 to4 carbon atoms, hydroxyl and hydroxyl-substituted lower alkyl groupshaving 1 to 4 carbon atoms, with the proviso that at least two of R₁, R₂and R₃ are either hydrogen, lower alkyl group or lower alkoxy group, andwherein X is an anionic moiety that forms a water-soluble salt with thehydroxylammonium cations or quaternary ammonium cations, and n is thevalence of X and is from 1 to 3. Hydroxylammonium compounds that can beused to form cleaning composition suitable for use with the cleaningmethod of the invention include hydroxylammonium salts such ashydroxylammonium nitrate (also referred to as HAN), hydroxylammoniumsulfate (also referred to as HAS), hydroxylammonium phosphate,hydroxylammoniun chloride, hydroxylammonium oxalate, hydroxylammoniumcitrate, hydroxylammonium fluoride, N,N-diethyl hydroxylammoniumsulfate, N,N-diethylhydroxylammonium nitrate, and the like.

The hydroxylammonium compound is present in the composition of theinvention in the range between about 0.01 wt. % to about 30 wt. %.Preferably, there is about 0.1 wt. % to about 20 wt. % of thehydroxylammonium compound in the composition. The amount ofhydroxylammonium compound relative to the amount of basic amine and/orquaternary ammonium hydroxide is adjusted such that the pH of theoverall composition is maintained within the range between about 2 toabout 6, preferably within a range between about 3.0 to about 4.5. Thehydroxylammonium compound facilitates the removal of plasma etchingresidues and inhibits corrosion of the metal substrate.

The present invention includes at least one basic compound. The basiccompound may be, for example, an amine or quaternary ammonium hydroxide.Amines that can be used as the basic component of the cleaningcomposition of the present invention include hydroxylamine and otheralkanolamines such as monoethanolamine, diethanolamine, triethanolamine,diethylene-glycolamine, N-hydroxylethylpiperazine, and the like.Quaternary ammonium hydroxides that can be used as the basic componentof the cleaning composition of the present invention includetetraalkylammonium hydroxides having methyl, ethyl, propyl, butyl,hydroxyethyl, and the combinations thereof (e.g., tetramethylammoniumhydroxide (hereinafter referred to as TMAH), tetraethylammoniumhydroxide, trimethyl hydroxyethylammonium hydroxide, methyl tri(hydroxyethyl) ammonium hydroxide, tetra (hydroxyethyl) ammoniumhydroxide, benzyl trimethylammonium hydroxide and the like).Additionally, a combination of ammonium hydroxide with one or morequaternary ammonium hydroxides may also be used.

The basic compound is present in the cleaning composition of theinvention in the range between about 0.01% to about 3%, by weight.Preferably, there is about 0.05% to about 2%, by weight, of the basiccompound in the composition.

At least one organic carboxylic acid must be included in the compositionof the present invention. The carboxylic acid serves as a corrosioninhibitor. Carboxylic acids, especially those containing hydroxylgroups, can effectively inhibit metal corrosion of aluminum, copper, andtheir alloys. The carboxylic acids have a chelating effect on thosemetals. Suitable carboxylic acids include monocarboxylic andpolycarboxylic acids. For example, the carboxylic acid may be, but isnot limited to, formic acid, acetic acid, propionic acid, valeric acid,isovaleric acid, oxalic acid, malonic acid, succinic acid, glutaricacid, maleic acid, fumaric acid, phthalic acid,1,2,3-benzenetricarboxylic acid, glycolic acid, lactic acid, citricacid, salicylic acid, tartaric acid, gluconic acid, and mixturesthereof. The preferred organic carboxylic acids are citric acid andlactic acid.

The organic carboxylic acid is conveniently added in an amount betweenabout 0.01 wt. % to about 10.0 wt. %. Preferably about 0.05 wt. % toabout 3.0 wt. %, and most preferably about 0.1 wt. % to about 1.0 wt. %of carboxylic acid is included in the composition.

The cleaning composition of the present invention may, optionally,include a polyhydric compound. The polyhydric compound may be, forexample, ethylene glycol, propylene glycol, glycerol, and mixturesthereof.

The present invention may further include additives. Additives such aschelating compounds or surface active agents can enhance theeffectiveness of the composition of the present invention in removingparticulate and/or metallic contaminants from the wafer surface.Suitable additives are, for example, nonionic surfactants, especiallychelating group attached polyoxyethylene type surfactant known as CS-1,which is commercially available from BASF.

In a preferred embodiment of the present invention, the composition forremoving plasma etch residues formed on a substrate comprises: water,about 0.2 wt. % to about 20 wt. % hydroxylammonium sulfate, about 0.01wt. % to about 0.1 wt. % of tetramethylammonium hydroxide, and about 0.1wt. % to about 3 wt. % citric acid. The pH of the composition of thisembodiment is between about 2 to about 6, and preferably about 3 toabout 4.

The substrate can be contacted with the cleaning composition by anysuitable method, such as by placing the cleaning composition into a tankand submerging the substrates into the cleaning composition. Preferably,the substrates are spray rinsed with the cleaning composition.

The present invention also includes a cleaning method used incombination with the following photoresist stripping processes, whichare typically conducted prior to the present cleaning method. Anysuitable dry stripping process can be used including O₂ plasma ashing,ozone gas phase-treatment, fluorine plasma treatment, hot H₂ gastreatment (described in U.S. Pat. No. 5,691,117), and the like. Thepreferred stripping process is O₂ plasma ashing.

In addition, the cleaning method can also be used in combination with aorganic wet stripping method. The organic wet strip can be performedeither before, after, or both before and after the cleaning method ofthe present invention. Any conventional organic wet stripping solutioncan be used and a person skilled in the art would be able to choose theappropriate organic wet stripper. The preferred wet stripping process istreatment with ozonated water in combination with the cleaningcomposition of the present invention. Thus, the cleaning method of theinvention can be used to replace the organic solvent-based post-striprinse. This is because the preferred cleaning composition is anon-corrosive and neutral to weakly acidic aqueous solution that willnot harm the environment. Furthermore, the cleaning compositions used inthe present cleaning method may be disposed of in a regular drain systemfor aqueous chemical wastes.

The method for removing a residue from a substrate, such as copper oraluminum, comprises the step of applying a cleaning compositioncomprising (a) water, (b) at least one hydroxylammonium compound, (c) atleast one basic compound, and (d) at least one organic carboxylic acid,to the substrate. The basic compound is preferably selected from thegroup consisting of amines and quaternary ammonium hydroxides. Inaddition, the cleaning composition may also include a polyhydriccompound. It is also preferred that the pH of the cleaning compositionbe about 2 to about 6. More preferably, the pH should be about 3.0 toabout 4.5.

To illustrate the present invention, the following examples areprovided. It should be understood that the present invention is notlimited to the examples described.

EXAMPLE 1

A cleaning solution was prepared by dissolving 21 grams ofhydroxylammonium sulfate (HAS) and 1 gram of citric acid (CA) in 9968gram of DI water and adjusting the pH of the resulting solution in therange of 3.3 to 3.4 by adding 1 gram of 25 wt. % of tetramethylammoniumhydroxide (TMAH). The resulting solution has the following concentrationof each component; HAS 0.21 wt. %, CA 0.1 wt. %, TMAH 0.01 wt. %, andthe balance water.

The test wafer was prepared by deposition of multilayers onto a siliconsubstrate, followed by plasma etching of the top three layers aftermicro-patternization of the photoresist film lithographically:

(1) Deposition of SiO₂ (bottom layer), Cu, Si₃N₄, a low-k dielectriclayer (SiLK® supplied by Dow Chemical), SiO₂, and photoresist (toplayer), where all other layers were deposited by thc CVD (chemical vapordeposition) method except for the SiLK and photoresist layers that werespin-coated; and

(2) Plasma etching of the upper SiO₂ layer was done by using thepatternized photoresist film as a mask with a fluorine-containing gas,followed by the second plasma etching of the SiLK layer as well asashing of the photoresist mask by using an oxygen-containing gas.

The resultant wafer had a chunk of post-etch residue dispersed insidethe via hole. The wafer was thereafter treated with the above-describedcleaning composition at 55° C. for 15 minutes, followed by a water rinseat room temperature for 5 minutes and then dried by blowing a jet streamof nitrogen gas onto the wafer surface.

The cleaned wafer was cut to see a cross-sectional view of the via holeunder a scanning electron microscope (SEM). The SEM inspection showedthat the post-etch residue was completely removed from the via holewithout any damage to other layers, i.e., SiLK, Cu, Si₃N₄, and top SiO₂layers.

EXAMPLE 2

A cleaning solution was prepared by adding 20.5 gram of solid HAS, 3.41gram of 88 wt. % lactic acid (LA) aqueous solution, and 0.91 gram of 25wt. % TMAH aqueous solution to DI water (75.18 gram). The resultingsolution had the following concentration of each component: HAS 20.5 wt.%, LA 3.0 wt. %, TMAH 0.23 wt. %, and the balance water.

The test wafer was prepared by deposition of multilayers onto a siliconsubstrate, followed by plasma etching of the top three layers aftermicro-pattemization of the photoresist film lithographically:

(1) Deposition of SiO₂ (bottom layer), TiN, Al—Cu alloy (Cu 1%), TiN,and photoresist (top layer), where all other layers were deposited byCVD except that the photoresist layer was spin-coated; and

(2) Plasma etching of the Al—Cu layer as well as the upper and lowernitride layers was done by using the patternized photoresist mask with achlorine-containing gas, followed by ashing the photoresist mask byusing an oxygen-containing gas.

The resultant wafer had a metal line of Al—Cu in a dimension of 0.6micron line width, with attached post-etch residue on the sidewall andtop of the metal line. The wafer was treated with the above-describedcleaning composition at 60° C. for 30 minutes, followed by a water rinseat room temperature for 5 minutes, then dried by blowing a jet stream ofnitrogen gas onto the wafer surface.

The cleaned wafer was cut to see a cross-sectional view of the Al—Culine under SEM so as to determine a line loss of the Al—Cu metal causedby the treatment. The SEM inspection showed that the post-etch residuewas completely removed and the line loss was below 5% of the total linewidth, which is considered an acceptable level.

EXAMPLE 3 (COMPARATIVE)

A cleaning solution was prepared in the same manner described in Example1, except that citric acid was not added to the cleaning solution. Thesame test wafer was used in this test as in Example 1.

SEM inspection showed that the post-etch residue was completely removedfrom the via hole like Example 1, but the copper layer was significantlycorroded compared with the result of Example 1 under the same testcondition as applied in Example 1.

EXAMPLE 4 (COMPARATIVE)

A cleaning solution was prepared in the same manner described in Example2, except that lactic acid was not added to the cleaning solution. Thesame test wafer was used in this test as in Example 2.

The SEM inspection showed that the post-etch residue was completelyremoved, similar to Example 2, but the line loss was more than 5% of thetotal aluminum line width under the same test condition as applied inExample 2.

While the invention has been described above with reference to specificembodiments thereof, it is apparent that many changes, modifications andvariations can be made without departing from the inventive conceptdisclosed herein. Accordingly, it is intended to embrace all suchchanges, modifications and variations that fall within the spirit andbroad scope of the appended claims. All patent applications, patents andother publications cited herein are incorporated by reference in theirentirety.

1-29. (canceled)
 30. A method for cleaning residue from a substrate,which comprises the step of: applying a cleaning composition to saidsubstrate, said composition comprises (a) water, (b) at least onehydroxylammonium compound, (c) at least one basic compound, and (d) atleast one carboxylic acid present in an amount between about 0.01 wt. %to 10 wt. % based on the total weight of the composition.
 31. The methodof claim 30, wherein said hydroxylammonium compound is selected from thegroup consisting of: hydroxylammonium sulfate, hydroxylammonium nitrate,hydroxylammonium phosphate, hydroxylammonium chloride, hydroxylammoniumfluoride, hydroxylammonium oxalate, hydroxylammonium citrate,hydroxylammonium lactate, and mixtures thereof.
 32. The method of claim30, wherein said hydroxylammonium compound is present in an amountbetween about 0.01 wt. % to 30 wt. % based on the total weight of saidcomposition.
 33. The method of claim 30, wherein said basic compound isselected from the group consisting of amines and quaternary ammoniumhydroxides.
 34. The method of claim 33, wherein said basic compound is aquaternary ammonium hydroxide selected from the group consisting of:tetramethylammonium hydroxide, tetraethylammonium hydroxide, andmixtures thereof.
 35. The method of claim 30, wherein said basiccompound is present in an amount between about 0.01 wt. % to 3 wt. %based on the total weight of said composition.
 36. The method of claim30, wherein said organic carboxylic acid is selected from the groupconsisting of: lactic acid, citric acid, ethylenediaminetetraaceticacid, formic acid, oxalic acid, acetic acid, propionic acid, valericacid, isovaleric acid, malonic acid, succinic acid, glutaric acid,maleic acid, fumaric acid, phthalic acid, 1,2,3-benzenetricarboxylicacid, glycolic acid, salicylic acid, tartaric acid, gluconic acid, andmixtures thereof.
 37. The method of claim 30, further comprising apolyhydric compound.
 38. The method of claim 37, wherein said polyhydriccompound is selected from the group consisting of ethylene glycol,propylene glycol, glycerol, and mixtures thereof.
 39. The method ofclaim 30, wherein said composition has a pH of about 2 to
 6. 40. Themethod of claim 30, wherein said composition has a pH of about 3 to 4.5.41. The method of claim 30, wherein said substrate is a metal substrate